Researchers at The University of Osaka have developed a novel technique to enhance the performance and reliability of silicon carbide (SiC) metal-oxide-semiconductor (MOS) devices, a key component in ...

Researchers at École Polytechnique Fédérale de Lausanne (EPFL) and Center Suisse d’Electronique et de Microtechnique (CSEM) in Switzerland developed a novel single-step thermal annealing process for ...

A hydrogen-based two-step annealing process improves SiC MOS device efficiency and reliability, expanding voltage range for electric vehicles and renewable energy systems. SiC power devices offer ...

Murray Thom, vice president for quantum technology evangelism for D-Wave, knows that his company for more than two decades has played a key role in a somewhat unusual industry. “One of the things ...