Korea leads ferroelectric patents as Samsung, SK hynix drive AI memory push Patent surge cements Koreas edge in ...

Researchers reduce the total thickness of capacitor stacks while maintaining strong polarization properties. (Nanowerk News) Modern electronic technology is rapidly advancing towards miniaturization, ...

Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

Flipping ferroelectric polarization reverses bimeron topology in a two-dimensional magnet, allowing voltage pulses alone to ...

Researchers from the Institute of Science Tokyo and Canon ANELVA Corporation built an ultrathin ferroelectric memory ...

Researchers in Japan have developed ultrathin ferroelectric capacitors that maintain strong polarization at a stack thickness of just 30 nm, including top and bottom electrodes. Using scandium-doped ...

Ferroelectric capacitors can be made as thin as 30nm to add memory between the metallisation layers of ICs, according to ...

Imagine a future where your phone, computer or even a tiny wearable device can think and learn like the human brain -- processing information faster, smarter and using less energy. A breakthrough ...

An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite being just 30 nm thick including top and bottom electrodes—making it ...

A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the Department of Semiconductor Engineering at Pohang University of Science and Technology ...