Scientists from RWTH Aachen University, AMO GmbH, AIXTRON SE, and EPFL have demonstrated power detectors based on Molybdenum disulphide (MoS 2) that operate at zero bias.

(Nanowerk Spotlight) For new generation electronic appliances advanced nanoscale transistors are in demand which needs precise biasing of each device. These stringent biasing conditions can be relaxed ...

Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead. In 1952, the field effect transistor of Shockley was ...

New modeling reveals how strain and high-k dielectrics mitigate phonon scattering in ultra-scaled MoS2 transistors, enhancing performance in nanometre devices.

A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...