As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of ...

Chipmakers face a multitude of challenges in the fab at 10nm/7nm and beyond, but one technology that is typically under the radar is becoming especially difficult—metrology. Metrology, the art of ...

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...

Samsung today announced that it's begun mass producing 14nm LPP (Low-Power Plus) logic chips based on its three-dimensional (3D) FinFET process. The South Korean chip maker also confirmed that ...

Rita was a Managing Editor at Android Police. Once upon a time, she was a pharmacist as well. Her love story with Android started in 2009 and has been going stronger with every update, device, tip, ...

Samsung Electronics has announced that its development of the 3 nm gate-all-around (GAA) process called 3GAE is on track and that it has made available version 0.1 of its process design kit (PDK) in ...

The demand for smartphones and tablets with better performance and longer battery life has been driving the industry to come up with chips that are faster, smaller and use less power. To remain on ...

GLOBALFOUNDRIES recently announced their upcoming 7nm FinFET manufacturing process which is expected to go into production in early 2018. According to the GLOBALFOUNDRIES, their new 7nm FinFET ...

China's Semiconductor Manufacturing International (SMIC) has kicked off volume production of 14nm FinFET chips, and plans to move a newer 12nm FinFET process to risk production by the end of 2019, ...