SemiQ Inc. has released its QSiC 1,200-V third-generation silicon-carbide (SiC) MOSFET that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller compared to ...
In power electronics applications, the compound semiconductor silicon carbide (SiC) has been demonstrated in published literature to be a superior material to silicon (Si) in many properties for the ...
Advances in EV technology to make them more practical. How SiC MOSFETs will help meet the current challenges in the EV arena. The all-important high switching speeds of SiC MOSFETs. Silicon-carbide ...
TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TPD7107F,” a gate driver switch IPD [1] that controls the conduction and shut-off of current supplied ...
The Gen III TrenchFET family of power MOSFETs now includes two 20-V and two 30-V N-channel devices that are the first to offer TurboFET technology, which uses a charge-balanced drain structure to ...
The Forward and Flyback converters are two popular topologies widely used in isolated DC-DC power converters. These topologies are favored by designers for their simplicity, ability to handle multiple ...
Wolfspeed’s third-generation planar silicon carbide mosfets have been designed with an increased Cgs/Cgd ratio for better hard-switching performance and more linear Coss behaviour for soft-switching ...
Analogue Devices has combined switched capacitor and inductive buck conversion in the same topology to reduce the size of step-down dc-dc converters. Called LTC7821, this is “industry first hybrid ...
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