Engineers at MIT have demonstrated that vertical three-dimensional transistor architectures, built with features as small as ...

POSTECH develops a low-temperature heterojunction-based transistor that implements complex circuits with a single device.

Researchers have developed a transistor technology that enables a single semiconductor device to perform ...

Researchers at Pohang University of Science & Technology (POSTECH) developed a zinc oxide (ZnO) and tellurium (Te) ...

Seoul National University researchers have developed an ultra-low-voltage electrochemical organic light-emitting transistor ...

Seoul National University researchers have developed an ultra-low-voltage organic transistor that integrates signal ...

(Application Note) Here is a new Application Note from Nanosurf on conductive AFM (C-AFM) measurements on a polished IC surface with multiple transistor contacts. Chemical-mechanical polishing (CMP) ...

Transistors in some circuit configurations work together and, frequently, need to be matched. This is so common that you can sometimes find ICs that are just a pair of transistors made with the same ...

The EPC8010 power transistor, sold in die form, measures 1.75 mm 2 with 100 VDS. Optimized for high speed switching, the device has a maximum R DS(on) of 160 mΩ and input gate charge in the hundreds ...

Efficient Power Conversion Corporation extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm2 with 100 VDS.