A technical paper titled “Characterizing semiconductor devices for all-electric aircraft” was published by researchers at University of Strathclyde (Glasgow) and Airbus UpNext. “Cryogenic propulsion ...

System-in-package (SiP) and other advanced packaging technologies are putting more components together in tighter spaces than previously seen. Often these packages are contained in a module, which is ...

SAN JOSE, Calif. – Power Integrations in San Jose, Calif., is introducing the SCALE-iFlex LT NTC family of silicon carbide (SiC) insulated-gate bipolar transistor (IGBT) power devices for systems with ...

NUREMBERG, Germany--(BUSINESS WIRE)--PCIM 2023 – Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today introduced the ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use power semiconductor module for ...

Power Integrations announced a family of gate-driver boards for Infineon EconoDual power switching modules. The family is called Scale EV, and its first member is 2SP0215F2Q0C, designed for the ...

Fuji Electric ’s IGBT Module (or insulated-gate bipolar transistor) is a high-performance 7th generation IGBT/FWD chipset with a compact design that provides for greater power output. It has ...

This paper presents a novel 3-phase IGBT module called the SPM (Smart Power Module). This is a new design developed to provide a very compact, low cost, high perfor- mance and reliable motor drive ...

Yole Group announced the release of two new complementary analyses: IGBT 2025, a Market & Technology Trends report, and Si IGBT Comparison 2025, providing the industry’s most comprehensive analysis of ...